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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>24/30497109 DC BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 5. Test method for defects using X-ray topography
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immediate downloadReleased: 2024-07-12
24/30497109 DC BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 5. Test method for defects using X-ray topography

24/30497109 DC

BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Part 5. Test method for defects using X-ray topography

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Standard number:24/30497109 DC
Pages:32
Released:2024-07-12
Status:Draft for Comment
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24/30497109 DC


This standard 24/30497109 DC BS EN IEC 63068-5 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices

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