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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>BS EN 62047-16:2015 Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
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immediate downloadReleased: 2015-07-31
BS EN 62047-16:2015 Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods

BS EN 62047-16:2015

Semiconductor devices. Micro-electromechanical devices Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods

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Standard number:BS EN 62047-16:2015
Pages:18
Released:2015-07-31
ISBN:978 0 580 78080 6
Status:Standard
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BS EN 62047-16:2015


This standard BS EN 62047-16:2015 Semiconductor devices. Micro-electromechanical devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices

This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These methods are used to determine the residual stresses within thin films deposited on substrate [1]1.