Log inSign up
LANGUAGE en
Menu
STOREE-ReadingHelp centerContactsDelivery chargesABOUT US News
SEARCH
0
Total price
0 EUR
PRICES include / exclude VAT
Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.99 Other semiconductor devices>BS EN 62047-17:2015 Semiconductor devices. Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films
Sponsored link
immediate downloadReleased: 2015-07-31
BS EN 62047-17:2015 Semiconductor devices. Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films

BS EN 62047-17:2015

Semiconductor devices. Micro-electromechanical devices Bulge test method for measuring mechanical properties of thin films

Format
Availability
Price and currency
English Secure PDF
Immediate download
312.18 EUR
You can read the standard for 1 hour. More information in the category: E-reading
Reading the standard
for 1 hour
31.22 EUR
You can read the standard for 24 hours. More information in the category: E-reading
Reading the standard
for 24 hours
93.65 EUR
English Hardcopy
In stock
312.18 EUR
Standard number:BS EN 62047-17:2015
Pages:34
Released:2015-07-31
ISBN:978 0 580 72203 5
Status:Standard
DESCRIPTION

BS EN 62047-17:2015


This standard BS EN 62047-17:2015 Semiconductor devices. Micro-electromechanical devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices
IEC 62047-17:2015 specifies the method for performing bulge tests on the free-standing film that is bulged within a window. The specimen is fabricated with micro/nano structural film materials, including metal, ceramic and polymer films, for MEMS, micromachines and others. The thickness of the film is in the range of 0,1 ? to 10 ?, and the width of the rectangular and square membrane window and the diameter of the circular membrane range from 0,5 mm to 4 mm. The tests are carried out at ambient temperature, by applying a uniformly-distributed pressure to the testing film specimen with bulging window. Elastic modulus and residual stress for the film materials can be determined with this method.
Print