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immediate downloadReleased: 2010-06-30
BS EN 62417:2010
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
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| Standard number: | BS EN 62417:2010 |
| Pages: | 12 |
| Released: | 2010-06-30 |
| ISBN: | 978 0 580 58622 4 |
| Status: | Standard |
DESCRIPTION
BS EN 62417:2010
This standard BS EN 62417:2010 Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) is classified in these ICS categories:
- 31.080.30 Transistors
- 31.190 Electronic component assemblies
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.