PRICES include / exclude VAT
Sponsored link
immediate downloadReleased: 2010-06-30
BS EN 62417:2010
Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
Format
Availability
Price and currency
English Secure PDF
Immediate download
162.14 EUR
You can read the standard for 1 hour. More information in the category: E-reading
Reading the standardfor 1 hour
16.21 EUR
You can read the standard for 24 hours. More information in the category: E-reading
Reading the standardfor 24 hours
48.64 EUR
English Hardcopy
In stock
162.14 EUR
| Standard number: | BS EN 62417:2010 |
| Pages: | 12 |
| Released: | 2010-06-30 |
| ISBN: | 978 0 580 58622 4 |
| Status: | Standard |
DESCRIPTION
BS EN 62417:2010
This standard BS EN 62417:2010 Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) is classified in these ICS categories:
- 31.080.30 Transistors
- 31.190 Electronic component assemblies
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.