BS EN IEC 63373:2022 Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

Standard number: BS EN IEC 63373:2022

Pages: 20

Released: 2022-06-17

ISBN: 978 0 539 17023 8

Name: Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

Status: Standard

Overview

The BS EN IEC 63373:2022 standard provides comprehensive guidelines for the dynamic on-resistance test methods specifically designed for Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based power conversion devices. This standard is essential for professionals and organizations involved in the design, testing, and application of GaN HEMT technology in power conversion systems.

Key Features

• Comprehensive Guidelines: This standard offers detailed procedures and methodologies for accurately measuring the dynamic on-resistance of GaN HEMT devices, ensuring reliable and consistent results.
• Industry Relevance: Released on June 17, 2022, this standard is up-to-date with the latest advancements in GaN HEMT technology, making it highly relevant for current and future applications.
• International Recognition: As a BS EN IEC standard, it is recognized and respected globally, providing a benchmark for quality and reliability in the field of power conversion.
• ISBN: The standard is easily identifiable and accessible with its unique ISBN: 978 0 539 17023 8.

Why Choose BS EN IEC 63373:2022?

GaN HEMT technology is revolutionizing the power conversion industry with its superior efficiency and performance. However, to fully leverage its potential, precise and reliable testing methods are crucial. The BS EN IEC 63373:2022 standard addresses this need by providing a robust framework for dynamic on-resistance testing, which is a critical parameter in evaluating the performance of GaN HEMT devices.

Benefits of Using This Standard

• Enhanced Accuracy: The guidelines ensure that the dynamic on-resistance measurements are accurate, reducing the margin of error and enhancing the reliability of the test results.
• Consistency: By following a standardized method, different laboratories and organizations can achieve consistent results, facilitating better comparison and benchmarking.
• Improved Device Performance: Accurate testing helps in identifying and mitigating issues, leading to the development of more efficient and reliable GaN HEMT power conversion devices.
• Global Acceptance: Being an internationally recognized standard, it ensures that the test methods are accepted and respected worldwide, aiding in global collaborations and market expansion.

Who Should Use This Standard?

This standard is indispensable for a wide range of professionals and organizations, including:

• Power Electronics Engineers: Engineers involved in the design and development of power conversion systems can use this standard to ensure their GaN HEMT devices meet the highest performance and reliability standards.
• Testing Laboratories: Laboratories conducting tests on GaN HEMT devices will find this standard invaluable for ensuring their testing methods are accurate and consistent.
• Quality Assurance Teams: QA teams can use the guidelines to verify that the devices meet the required specifications and performance criteria.
• Academic Researchers: Researchers studying GaN HEMT technology can use this standard as a reference for their experimental setups and methodologies.

Detailed Content

The BS EN IEC 63373:2022 standard spans 20 pages, meticulously detailing the procedures and methodologies for dynamic on-resistance testing. It covers various aspects, including:

• Test Setup: Detailed instructions on setting up the test environment and equipment to ensure accurate measurements.
• Measurement Techniques: Step-by-step guidelines on the measurement techniques to be used, ensuring precision and reliability.
• Data Analysis: Methods for analyzing the test data to derive meaningful insights and conclusions.
• Reporting: Guidelines on how to document and report the test results, ensuring clarity and comprehensiveness.

Conclusion

The BS EN IEC 63373:2022 standard is an essential resource for anyone involved in the field of GaN HEMT based power conversion devices. Its comprehensive guidelines ensure accurate and reliable dynamic on-resistance testing, which is crucial for the development and application of high-performance power conversion systems. By adhering to this standard, professionals and organizations can achieve enhanced accuracy, consistency, and global acceptance in their testing methodologies.

BS EN IEC 63373:2022

This standard BS EN IEC 63373:2022 Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices is classified in these ICS categories:

• 31.080.99 Other semiconductor devices

In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.