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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>BS IEC 60747-5-9:2019 Semiconductor devices Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
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immediate downloadReleased: 2020-01-14
BS IEC 60747-5-9:2019 Semiconductor devices Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence

BS IEC 60747-5-9:2019

Semiconductor devices Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence

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Standard number:BS IEC 60747-5-9:2019
Pages:22
Released:2020-01-14
ISBN:978 0 580 51623 8
Status:Standard
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BS IEC 60747-5-9:2019


This standard BS IEC 60747-5-9:2019 Semiconductor devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices
  • 31.080.01 Semiconductor devices in general
IEC 60747-5-9:2019(E) specifies the measuring method of the internal quantum efficiency (IQE) of single light emitting diode (LED) chips or packages without phosphor. White LEDs for lighting applications are out of the scope of this document. This document utilizes the relative external quantum efficiencies (EQEs) measured at cryogenic temperatures and at an operating temperature, which is called temperature-dependent electroluminescence (TDEL). In order to identify the reference IQE of 100 %, the maximum values of the peak EQE are found by varying the environmental temperature and current.
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