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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>BS IEC 60747-9:2019 Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)
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immediate downloadReleased: 2019-11-22
BS IEC 60747-9:2019 Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)

BS IEC 60747-9:2019

Semiconductor devices Discrete devices. Insulated-gate bipolar transistors (IGBTs)

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Standard number:BS IEC 60747-9:2019
Pages:82
Released:2019-11-22
ISBN:978 0 580 94714 8
Status:Standard
DESCRIPTION

BS IEC 60747-9:2019


This standard BS IEC 60747-9:2019 Semiconductor devices is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.30 Transistors

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).