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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>BS IEC 62047-29:2017 Semiconductor devices. Micro-electromechanical devices Electromechanical relaxation test method for freestanding conductive thin-films under room temperature
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immediate downloadReleased: 2018-03-15
BS IEC 62047-29:2017 Semiconductor devices. Micro-electromechanical devices Electromechanical relaxation test method for freestanding conductive thin-films under room temperature

BS IEC 62047-29:2017

Semiconductor devices. Micro-electromechanical devices Electromechanical relaxation test method for freestanding conductive thin-films under room temperature

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Standard number:BS IEC 62047-29:2017
Pages:16
Released:2018-03-15
ISBN:978 0 580 94013 2
Status:Standard
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BS IEC 62047-29:2017


This standard BS IEC 62047-29:2017 Semiconductor devices. Micro-electromechanical devices is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080.99 Other semiconductor devices
IEC 62047-29:2017(E) specifies a relaxation test method for measuring electromechanical properties of freestanding conductive thin films for micro-electromechanical systems (MEMS) under controlled strain and room temperature. Freestanding thin films of conductive materials are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products. Freestanding thin films in the products experience external and internal stresses which could be relaxed even under room temperature during a period of operation, and this relaxation leads to time-dependent variation of electrical performances of the products. This test method is valid for isotropic, homogeneous, and linearly viscoelastic materials.
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