BS IEC 62880-1:2017 Semiconductor Devices Stress Migration Test Standard

Welcome to the world of semiconductor testing with the BS IEC 62880-1:2017 standard. This comprehensive document is your gateway to understanding and implementing the copper stress migration test standard, a critical component in the evaluation of semiconductor devices. Released on July 21, 2020, this standard is a must-have for professionals in the semiconductor industry, ensuring that your devices meet the highest quality and reliability standards.

Overview

The BS IEC 62880-1:2017 standard is a meticulously crafted document that provides detailed guidelines for conducting stress migration tests on semiconductor devices, specifically focusing on copper. Stress migration is a phenomenon that can significantly impact the performance and longevity of semiconductor devices, making this standard an essential tool for engineers and researchers.

Key Features

• Standard Number: BS IEC 62880-1:2017
• Pages: 28
• Release Date: July 21, 2020
• ISBN: 978 0 580 85808 6
• Status: Standard

Why Choose BS IEC 62880-1:2017?

In the fast-paced world of semiconductor technology, staying ahead of the curve is crucial. The BS IEC 62880-1:2017 standard provides you with the tools and knowledge to ensure your semiconductor devices are robust and reliable. By adhering to this standard, you can:

• Enhance Device Reliability: Stress migration can lead to device failure over time. This standard helps you identify and mitigate these risks, ensuring your devices perform optimally throughout their lifecycle.
• Improve Quality Assurance: By following the guidelines set out in this standard, you can implement rigorous testing procedures that enhance the overall quality of your semiconductor products.
• Stay Compliant: Compliance with international standards is crucial for market access and competitiveness. The BS IEC 62880-1:2017 standard ensures your products meet global expectations.

Detailed Insights

The BS IEC 62880-1:2017 standard delves into the intricacies of stress migration testing, providing detailed methodologies and best practices. It covers various aspects, including:

• Test Setup: Detailed instructions on setting up the test environment to ensure accurate and repeatable results.
• Measurement Techniques: Comprehensive guidelines on the measurement techniques used to assess stress migration in copper-based semiconductor devices.
• Data Analysis: Insights into analyzing test data to identify potential issues and implement corrective actions.

Who Should Use This Standard?

The BS IEC 62880-1:2017 standard is designed for a wide range of professionals in the semiconductor industry, including:

• Semiconductor Engineers: Engineers involved in the design and testing of semiconductor devices will find this standard invaluable for ensuring device reliability.
• Quality Assurance Professionals: QA teams can use this standard to implement robust testing procedures that enhance product quality.
• Researchers: Academics and researchers studying stress migration phenomena will benefit from the detailed methodologies outlined in this standard.

Conclusion

In conclusion, the BS IEC 62880-1:2017 standard is an essential resource for anyone involved in the semiconductor industry. Its comprehensive guidelines and detailed methodologies provide the foundation for conducting effective stress migration tests, ensuring your devices meet the highest standards of quality and reliability. By incorporating this standard into your testing procedures, you can enhance the performance and longevity of your semiconductor products, giving you a competitive edge in the market.

Embrace the future of semiconductor testing with the BS IEC 62880-1:2017 standard and ensure your devices are built to last.

BS IEC 62880-1:2017

This standard BS IEC 62880-1:2017 Semiconductor devices. Stress migration test standard is classified in these ICS categories:

• 31.080.01 Semiconductor devices in general

This part of IEC 62880 describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

Dual damascene Cu metallization systems usually have liners, such as tantalum (Ta) or tantalum nitride (TaN) on the bottom and sides of trenches etched into dielectric layers. Hence, for structures in which a single via contacts a wide line below it, a void under the via can cause an open circuit at almost the same time as any percentage resistance shift that would satisfy a failure criterion.