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Homepage>BS Standards>31 ELECTRONICS>31.200 Integrated circuits. Microelectronics>BS IEC 63011-3:2018 Integrated circuits. Three dimensional integrated circuits Model and measurement conditions of through-silicon via
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immediate downloadReleased: 2019-01-24
BS IEC 63011-3:2018 Integrated circuits. Three dimensional integrated circuits Model and measurement conditions of through-silicon via

BS IEC 63011-3:2018

Integrated circuits. Three dimensional integrated circuits Model and measurement conditions of through-silicon via

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Standard number:BS IEC 63011-3:2018
Pages:18
Released:2019-01-24
ISBN:978 0 580 96279 0
Status:Standard
DESCRIPTION

BS IEC 63011-3:2018


This standard BS IEC 63011-3:2018 Integrated circuits. Three dimensional integrated circuits is classified in these ICS categories:
  • 31.200 Integrated circuits. Microelectronics
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.  
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