Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Classification of defects
Format
Availability
Price and currency
English Secure PDF
Immediate download
253.00 EUR
English Hardcopy
In stock
253.00 EUR
Standard number:
BS IEC 63068-1:2019
Pages:
26
Released:
2019-05-10
ISBN:
978 0 580 96413 8
Status:
Standard
DESCRIPTION
BS IEC 63068-1:2019
This standard BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:
31.080.99 Other semiconductor devices
IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
