BS IEC 63068-4:2022 - Semiconductor Devices Standard

Standard Number: BS IEC 63068-4:2022

Pages: 28

Released: 2022-09-07

ISBN: 978 0 539 18417 4

Status: Standard

Overview

The BS IEC 63068-4:2022 standard is an essential document for professionals in the semiconductor industry, particularly those working with silicon carbide (SiC) homoepitaxial wafers for power devices. This standard provides a comprehensive procedure for the non-destructive recognition and evaluation of defects in SiC wafers using a combined method of optical inspection and photoluminescence.

Key Features

• Non-Destructive Testing: The standard outlines a non-destructive approach, ensuring that the integrity of the silicon carbide wafers is maintained during the inspection process.
• Combined Method: Utilizes both optical inspection and photoluminescence techniques to identify and evaluate defects, providing a more thorough and accurate assessment.
• Comprehensive Criteria: Establishes clear criteria for recognizing various types of defects, aiding in the consistent and reliable evaluation of wafer quality.
• Industry Relevance: Specifically designed for power devices, making it highly relevant for applications in high-power and high-frequency electronics.

Detailed Description

Silicon carbide (SiC) is a material of choice for high-power and high-frequency electronic devices due to its superior properties, such as high thermal conductivity, high electric field breakdown strength, and wide bandgap. However, the performance and reliability of SiC-based devices are highly dependent on the quality of the SiC homoepitaxial wafers used in their fabrication. Defects in these wafers can significantly impact device performance, making defect recognition and evaluation a critical step in the manufacturing process.

The BS IEC 63068-4:2022 standard provides a detailed procedure for identifying and evaluating defects in SiC homoepitaxial wafers. By combining optical inspection and photoluminescence techniques, this standard offers a robust method for detecting a wide range of defects, including micropipes, dislocations, and stacking faults.

Optical Inspection

Optical inspection is a widely used technique for detecting surface defects in semiconductor wafers. This method involves examining the wafer surface under a microscope to identify visible defects. The BS IEC 63068-4:2022 standard specifies the equipment and procedures required for effective optical inspection, ensuring that even the smallest defects are detected.

Photoluminescence

Photoluminescence is a powerful technique for detecting subsurface defects in semiconductor materials. When a semiconductor is exposed to light, it emits photons, and the pattern of this emission can reveal the presence of defects. The BS IEC 63068-4:2022 standard outlines the procedures for conducting photoluminescence inspections, including the required equipment and the interpretation of results.

Benefits

• Improved Quality Control: By providing a standardized method for defect recognition and evaluation, this standard helps manufacturers ensure the quality and reliability of their SiC wafers.
• Enhanced Device Performance: Identifying and addressing defects early in the manufacturing process can lead to significant improvements in the performance and reliability of SiC-based devices.
• Cost Savings: Non-destructive testing methods reduce the risk of damaging wafers during inspection, leading to cost savings in the manufacturing process.
• Industry Compliance: Adhering to this standard ensures compliance with industry best practices, enhancing the reputation and credibility of manufacturers.

Who Should Use This Standard?

The BS IEC 63068-4:2022 standard is designed for a wide range of professionals in the semiconductor industry, including:

• Quality control engineers
• Process engineers
• Research and development teams
• Manufacturing engineers
• Semiconductor device designers

Conclusion

The BS IEC 63068-4:2022 standard is an invaluable resource for anyone involved in the production and quality control of silicon carbide homoepitaxial wafers for power devices. By providing a clear and comprehensive procedure for non-destructive defect recognition and evaluation, this standard helps ensure the production of high-quality, reliable SiC wafers, ultimately leading to better-performing electronic devices.

With its detailed guidelines and combined approach of optical inspection and photoluminescence, the BS IEC 63068-4:2022 standard sets a high benchmark for quality and reliability in the semiconductor industry. Embrace this standard to enhance your manufacturing processes, improve device performance, and stay ahead in the competitive semiconductor market.

BS IEC 63068-4:2022

This standard BS IEC 63068-4:2022 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:

• 31.080.99 Other semiconductor devices