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Homepage>BS Standards>31 ELECTRONICS>31.080 Semiconductor devices>BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
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BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

BS IEC 63229:2021

Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

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Standard number:BS IEC 63229:2021
Pages:24
Released:2023-08-31
ISBN:978 0 539 02920 8
Status:Standard

BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Introducing the BS IEC 63229:2021, a comprehensive guide to the classification of defects in gallium nitride epitaxial film on silicon carbide substrate. This standard is an essential tool for professionals in the semiconductor industry, providing detailed information and guidelines on identifying and classifying defects in gallium nitride epitaxial films.

Released on 31st August 2023, this standard is the latest in the field, ensuring you have the most up-to-date information at your fingertips. With a total of 24 pages, it offers a thorough exploration of the topic, making it a valuable resource for anyone working with gallium nitride epitaxial films on silicon carbide substrates.

Key Features

The BS IEC 63229:2021 standard is packed with features designed to help you understand and navigate the complexities of defect classification in gallium nitride epitaxial films. Here are some of the key features:

  • Comprehensive Coverage: The standard covers a wide range of potential defects, providing detailed descriptions and classifications for each. This ensures you have a complete understanding of the potential issues that can arise when working with gallium nitride epitaxial films.
  • Up-to-Date Information: As a 2023 release, this standard contains the most recent information and guidelines in the field. This ensures you're working with the latest knowledge and best practices.
  • Easy to Understand: The standard is written in clear, concise language, making it easy to understand even for those new to the field. It also includes diagrams and illustrations to aid in comprehension.

Why Choose BS IEC 63229:2021?

Choosing the BS IEC 63229:2021 standard means choosing a resource that is trusted and used by professionals worldwide. It's a tool that will not only help you identify and classify defects in gallium nitride epitaxial films but also enhance your understanding of the material and its potential issues. This can lead to improved product quality, increased efficiency, and a more successful career in the semiconductor industry.

Furthermore, with its ISBN number 978 0 539 02920 8, you can be assured of its authenticity and credibility. This standard is recognized and respected globally, making it a valuable addition to your professional library.

Conclusion

In conclusion, the BS IEC 63229:2021 standard is a must-have for anyone working with gallium nitride epitaxial films on silicon carbide substrates. Its comprehensive coverage, up-to-date information, and easy-to-understand format make it a valuable resource for professionals in the semiconductor industry. Don't miss out on this opportunity to enhance your knowledge and skills. Order your copy today!

DESCRIPTION

BS IEC 63229:2021


This standard BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate is classified in these ICS categories:
  • 31.080.01 Semiconductor devices in general
  • 31.080 Semiconductor devices
  • 31.080.99 Other semiconductor devices
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.