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Homepage>BS Standards>71 CHEMICAL TECHNOLOGY>71.040 Analytical chemistry>71.040.40 Chemical analysis>BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
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immediate downloadReleased: 2010-11-30
BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

BS ISO 12406:2010

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

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Standard number:BS ISO 12406:2010
Pages:24
Released:2010-11-30
ISBN:978 0 580 66874 6
Status:Standard
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BS ISO 12406:2010


This standard BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon is classified in these ICS categories:
  • 71.040.40 Chemical analysis

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.