BS ISO 21466:2019 Microbeam Analysis: Scanning Electron Microscopy

Method for Evaluating Critical Dimensions by CDSEM

The BS ISO 21466:2019 is a comprehensive standard that provides a detailed methodology for evaluating critical dimensions using Scanning Electron Microscopy (SEM). Released on December 18, 2019, this standard is an essential resource for professionals in the field of microbeam analysis, offering a robust framework for precise measurement and analysis.

Key Features of BS ISO 21466:2019

• Standard Number: BS ISO 21466:2019
• Pages: 56
• Release Date: December 18, 2019
• ISBN: 978 0 580 94840 4
• Status: Standard

This standard is meticulously crafted to guide users through the process of evaluating critical dimensions using CDSEM (Critical Dimension Scanning Electron Microscopy). It is an indispensable tool for ensuring accuracy and consistency in measurements, which is crucial for quality control and research in various industries, including semiconductor manufacturing, materials science, and nanotechnology.

Why Choose BS ISO 21466:2019?

The BS ISO 21466:2019 standard is designed to meet the needs of professionals who require precise and reliable methods for microbeam analysis. Here are some reasons why this standard is a valuable addition to your technical library:

Comprehensive Guidance

With 56 pages of detailed instructions and guidelines, this standard provides comprehensive coverage of the methodologies involved in CDSEM. It ensures that users have access to the latest techniques and best practices in the field.

Up-to-Date Information

Released in December 2019, the BS ISO 21466:2019 standard incorporates the most recent advancements and innovations in scanning electron microscopy. This ensures that users are equipped with the most current and effective methods for evaluating critical dimensions.

International Recognition

As an ISO standard, BS ISO 21466:2019 is recognized and respected worldwide. It provides a common framework that facilitates international collaboration and ensures consistency across different regions and industries.

Enhanced Accuracy and Precision

The methodologies outlined in this standard are designed to enhance the accuracy and precision of measurements. This is particularly important in fields where even the smallest discrepancies can have significant impacts on the quality and performance of products.

Applications of BS ISO 21466:2019

The BS ISO 21466:2019 standard is applicable in a wide range of industries and research areas. Some of the key applications include:

• Semiconductor Manufacturing: Ensuring the precise measurement of critical dimensions in semiconductor devices is crucial for maintaining performance and reliability.
• Materials Science: Accurate microbeam analysis is essential for characterizing materials and understanding their properties at the microscopic level.
• Nanotechnology: In the rapidly evolving field of nanotechnology, precise measurement and analysis are vital for the development of new materials and devices.

Conclusion

The BS ISO 21466:2019 standard is an invaluable resource for professionals involved in microbeam analysis and scanning electron microscopy. Its comprehensive guidelines and up-to-date methodologies make it an essential tool for ensuring accuracy and consistency in critical dimension evaluation. By adopting this standard, organizations can enhance their measurement capabilities, improve product quality, and stay at the forefront of technological advancements.

BS ISO 21466:2019

This standard BS ISO 21466:2019 Microbeam analysis. Scanning electron microscopy. Method for evaluating critical dimensions by CDSEM is classified in these ICS categories:

• 37.020 Optical equipment

This document specifies the structure model with related parameters, file format and fitting procedure for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single isolated or dense line feature pattern down to size of 10 nm.