BS ISO 21820:2021 - Fine Ceramics Ultraviolet Photoluminescence Image Test Method

Discover the cutting-edge standard for analyzing polytypes of boron- and nitrogen-doped SiC crystals with the BS ISO 21820:2021. This comprehensive document is an essential resource for professionals in the field of advanced ceramics, providing a detailed methodology for utilizing ultraviolet photoluminescence imaging to assess the intricate structures of these high-tech materials.

Overview

The BS ISO 21820:2021 standard is a pivotal document for those working with fine ceramics, particularly in the realm of advanced technical ceramics. Released on February 19, 2021, this standard offers a robust framework for the ultraviolet photoluminescence image test method, specifically tailored for the analysis of polytypes in boron- and nitrogen-doped silicon carbide (SiC) crystals. With its precise guidelines, this standard is indispensable for ensuring the quality and performance of SiC crystals in various applications.

Key Features

• Standard Number: BS ISO 21820:2021
• Pages: 36
• Release Date: February 19, 2021
• ISBN: 978 0 580 96048 2
• Status: Standard

Why Choose BS ISO 21820:2021?

In the rapidly evolving field of advanced ceramics, staying ahead of the curve is crucial. The BS ISO 21820:2021 standard provides a comprehensive approach to analyzing the polytypes of SiC crystals, which are integral to numerous high-performance applications. By adhering to this standard, professionals can ensure that their materials meet the highest quality standards, thereby enhancing the reliability and efficiency of their products.

Advanced Ceramics and Their Applications

Advanced ceramics, also known as fine ceramics, are materials that exhibit exceptional properties such as high strength, thermal stability, and resistance to wear and corrosion. These characteristics make them ideal for use in a wide range of industries, including electronics, aerospace, automotive, and energy. The ability to accurately analyze and characterize these materials is essential for optimizing their performance and ensuring their suitability for specific applications.

Ultraviolet Photoluminescence Imaging

The ultraviolet photoluminescence image test method outlined in the BS ISO 21820:2021 standard is a powerful tool for examining the structural properties of SiC crystals. This technique involves the use of ultraviolet light to excite the material, causing it to emit light at different wavelengths. By capturing and analyzing these emissions, researchers can gain valuable insights into the crystal's composition and structure, enabling them to identify and differentiate between various polytypes.

Benefits of Using BS ISO 21820:2021

• Enhanced Material Characterization: Gain a deeper understanding of the structural properties of SiC crystals, leading to improved material performance.
• Quality Assurance: Ensure that your materials meet the highest standards of quality and reliability.
• Industry Compliance: Stay compliant with international standards, facilitating global collaboration and market access.
• Innovative Research: Leverage cutting-edge techniques to drive innovation and advance your research capabilities.

Conclusion

The BS ISO 21820:2021 standard is an invaluable resource for professionals in the field of advanced ceramics. By providing a detailed methodology for the ultraviolet photoluminescence image test method, this standard enables accurate analysis and characterization of boron- and nitrogen-doped SiC crystals. Whether you are involved in research, development, or production, adhering to this standard will help you achieve superior material performance and maintain a competitive edge in the industry.

Embrace the future of advanced ceramics with the BS ISO 21820:2021 standard and unlock the full potential of your materials.

BS ISO 21820:2021

This standard BS ISO 21820:2021 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals is classified in these ICS categories:

• 81.060.30 Advanced ceramics

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10^?3 ohm · cm to 10^?2 ohm · cm, applicable to power electronic devices.

This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 10¹⁶ cm^?3 to 10¹⁸ cm^?3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.