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immediate downloadReleased: 2009-05-31
BS ISO 23812:2009
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials
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Standard number: | BS ISO 23812:2009 |
Pages: | 30 |
Released: | 2009-05-31 |
ISBN: | 978 0 580 55765 1 |
Status: | Standard |
DESCRIPTION
BS ISO 23812:2009
This standard BS ISO 23812:2009 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials is classified in these ICS categories:
- 71.040.40 Chemical analysis
1.1
This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.