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Homepage>CSN Standards>72 BUILDING RAW MATERIALS, MATERIALS AND PRODUCTS>7260 Refractory products, general>CSN EN 15991 - Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)
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Released: 01.06.2016
CSN EN 15991 - Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

CSN EN 15991

Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV)

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Number of Standard:CSN EN 15991
Category:726078
Pages:28
Released:01.06.2016
Catalog number:99537
DESCRIPTION

CSN EN 15991

CSN EN 15991 This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1 000 mg/kg, after evaluation also from 0,001 mg/kg to about 5 000 mg/kg.
Original English text of CSN EN Standard.
The price of the Standard included all amendments and correcturs.
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