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Homepage>IEC Standards>IEC 62047-25:2016 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
download between 0-24 hoursReleased: 2016-08-29
IEC 62047-25:2016 - Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

IEC 62047-25:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 25: Technologie de fabrication de MEMS à base de silicium - Méthode de mesure de la résistance à la traction-compression et au cisaillement d'une micro zone de brasure

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Standard number:IEC 62047-25:2016
Released:2016-08-29
Language:English/French - Bilingual
DESCRIPTION

IEC 62047-25:2016

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

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