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Homepage>IEC Standards>IEC 62047-9:2011 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
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download between 0-24 hoursReleased: 2011-07-13
IEC 62047-9:2011 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

IEC 62047-9:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

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Standard number:IEC 62047-9:2011
Released:2011-07-13
Language:English/French - Bilingual
DESCRIPTION

IEC 62047-9:2011

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

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