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Homepage>IEC Standards>IEC 63284:2022 - Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
download between 0-24 hoursReleased: 2022-04-21
IEC 63284:2022 - Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

IEC 63284:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Dispositifs à semiconducteurs - Méthode d’essai de fiabilité par la commutation sur charge inductive pour les transistors au nitrure de gallium

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Standard number:IEC 63284:2022
Released:2022-04-21
Language:English/French - Bilingual
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IEC 63284:2022

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

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