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Homepage>IEEE Standards>31 ELECTRONICS>31.080 Semiconductor devices>31.080.01 Semiconductor devices in general>IEEE 641-1987 - IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays
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Released: 07.10.1988

IEEE 641-1987 - IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

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111.20 EUR
Withdraw:03.12.1992
Standard number:IEEE 641-1987
Released:07.10.1988
ISBN:978-0-7381-4235-7
Pages:34
Status:Inactive
Language:English
DESCRIPTION

IEEE 641-1987





New IEEE Standard - Inactive-Withdrawn. This standard has ten sections: an introduction to the MNOS device and memory array; symbols and definitions; references that contain added detail on specific concepts; MNOS arrays and functional operations; MNOS array retention; MNOS array endurance property; reliability considerations for MNOS arrays; the testing methodology necessary to establish the unique properties of the MNOS array for both the consumer and the producer; radiation effects on MNOS arrays; and nonvolatile memory technology, called floating-gate.
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