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Homepage>UNE standards>UNE EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
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in stockReleased: 2006-11-01
UNE EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

UNE EN 62373:2006

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

Ensayo de estabilidad a temperatura Bias para óxido metálico, semiconductores, transistores de efecto de campo (IEC 62373:2006) (Ratificada por AENOR en noviembre de 2006).

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Standard number:UNE EN 62373:2006
Pages:17
Released:2006-11-01
Status:Standard
DESCRIPTION

This standard UNE EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.) is classified in these ICS categories:

  • 31.080.30
Categories:
UNE standards
31.080.30 Transistors
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